Infineon IRL7486MTRPBF: High-Performance Dual N-Channel MOSFET in a Compact PQFN 2x2 Package

Power management in modern electronic devices demands components that deliver high efficiency, robust performance, and exceptional power density. The Infineon IRL7486MTRPBF stands out as a premier solution, integrating two advanced N-channel MOSFETs into an ultra-compact PQFN (Power Quad Flat No-Lead) 2x2 package. This innovative design addresses the critical need for minimizing PCB footprint while maximizing switching performance and thermal management in space-constrained applications.

Engineered with Infineon's proprietary OptiMOS™ technology, the IRL7486MTRPBF offers outstanding electrical characteristics. Each MOSFET features a low on-state resistance (RDS(on)) of just 5.3 mΩ at 10 V, significantly reducing conduction losses and improving overall system efficiency. This low RDS(on) is crucial for applications requiring high current handling, such as load switches, motor drives, and DC-DC converters in computing, telecommunications, and consumer electronics. The device supports a drain-source voltage (VDS) of 30 V, making it suitable for a wide range of low-voltage power conversion tasks.

The dual N-channel configuration provides design flexibility, allowing engineers to implement synchronous rectification, half-bridge topologies, or independent switching paths with a single component. This integration not only saves valuable board space but also simplifies layout and reduces parasitic inductance, enhancing switching performance. The MOSFETs are characterized by low gate charge (Qg) and fast switching speeds, which minimize switching losses and enable higher frequency operation. This is particularly beneficial for improving the transient response and efficiency of switch-mode power supplies (SMPS).

Thermal management is a critical factor in power design, and the IRL7486MTRPBF excels in this area. The PQFN 2x2 package features an exposed thermal pad that efficiently transfers heat from the die to the PCB, lowering the junction temperature and improving reliability under high-load conditions. This robust thermal performance ensures sustained operation in demanding environments.

In summary, the Infineon IRL7486MTRPBF combines high efficiency, compact size, and superior thermal properties, making it an ideal choice for next-generation power systems.

ICGOOODFIND: The Infineon IRL7486MTRPBF is a top-tier dual N-channel MOSFET that delivers exceptional power density and efficiency through advanced OptiMOS™ technology, low RDS(on), and excellent thermal management in a minimal footprint.

Keywords: OptiMOS™ technology, Low RDS(on), PQFN 2x2 package, Dual N-channel MOSFET, Thermal management.