Infineon IPD25N06S4L-30: A High-Performance OptiMOS Power MOSFET for Advanced Switching Applications
The relentless pursuit of higher efficiency, power density, and reliability in modern electronics drives the continuous innovation in power semiconductor technology. At the forefront of this evolution is the Infineon IPD25N06S4L-30, a benchmark N-channel power MOSFET that exemplifies the advanced capabilities of Infineon's proprietary OptiMOS™ technology. Engineered specifically for demanding switching applications, this component sets a new standard for performance in a compact package.
A key highlight of the IPD25N06S4L-30 is its exceptionally low on-state resistance (R DS(on)) of just 2.5 mΩ maximum at 10 V. This ultra-low resistance is critical for minimizing conduction losses, which directly translates into higher system efficiency and reduced heat generation. Designers can achieve more compact form factors by minimizing the need for large heat sinks, thereby increasing power density. This makes the device ideal for high-current applications where every watt of power saved is crucial.
Furthermore, this MOSFET is characterized by its superior switching performance. The low gate charge (Q G ) and optimized internal capacitances ensure fast switching transitions, which are paramount for high-frequency operation. This capability significantly reduces switching losses, a dominant factor in applications like switch-mode power supplies (SMPS), motor drives, and DC-DC converters. The fast switching speed allows for higher operating frequencies, enabling the use of smaller passive components like inductors and capacitors.
The device is rated for a drain-source voltage (V DS ) of 60 V and a continuous drain current (I D ) of 180 A at 25°C, providing a robust solution for a wide range of industrial and automotive environments. Its advanced leadframe-based package (D2PAK) offers superior thermal resistance, ensuring that heat is efficiently dissipated from the silicon die to the PCB. This robust construction enhances the module's long-term reliability under strenuous operating conditions.
A significant application area is in automotive systems, such as electronic power steering, transmission control, and advanced driver-assistance systems (ADAS), where reliability and performance are non-negotiable. It is also perfectly suited for server and telecom power supplies, where efficiency metrics like 80 Plus Titanium are mandatory.
ICGOO FIND: The Infineon IPD25N06S4L-30 stands out as a premier OptiMOS power MOSFET, delivering an unmatched combination of ultra-low R DS(on), exceptional switching speed, and high current handling in a thermally efficient package. It is an optimal choice for engineers designing next-generation power systems that demand peak efficiency and uncompromising reliability.
Keywords: OptiMOS, Low R DS(on), High Switching Speed, Power Density, Automotive Grade.
