Infineon BSC028N06LS3G: A High-Performance OptiMOS™ Power MOSFET for Efficient Switching Applications

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. Addressing this need, the Infineon BSC028N06LS3G stands out as a benchmark in power MOSFET technology. As a member of Infineon's esteemed OptiMOS™ family, this N-channel MOSFET is engineered to deliver exceptional performance in a wide array of switching applications, from server and telecom power supplies to motor control and synchronous rectification.

At the heart of its design is an advanced trench technology that achieves an outstandingly low typical on-state resistance (RDS(on)) of just 2.8 mΩ at a gate-source voltage of 10 V. This ultra-low resistance is paramount for minimizing conduction losses, which directly translates into higher system efficiency and reduced heat generation. Designers can therefore create more compact systems with less demanding thermal management requirements, pushing the boundaries of power density.

Beyond its static performance, the BSC028N06LS3G excels in dynamic operation. It features exceptionally low gate charge (Qg) and superior switching characteristics, which are critical for high-frequency operation. The low gate charge allows for faster switching speeds and reduces the driving losses in the controller IC, making it ideal for high-frequency switch-mode power supplies (SMPS) where every watt saved counts. This combination of low RDS(on) and low Qg is the key to optimizing both conduction and switching losses simultaneously—a often challenging trade-off in power design.

Rated for 60 V drain-source voltage (VDS) and a continuous drain current (ID) of 50 A, this MOSFET offers a robust solution for a broad 12 V to 48 V infrastructure. Its qualification for industrial and automotive applications ensures high reliability and robustness under stringent operating conditions. The device is also housed in a space-efficient, low-inductance SuperSO8 package, which contributes to its excellent switching performance and thermal behavior.

ICGOOODFIND: The Infineon BSC028N06LS3G OptiMOS™ MOSFET is a superior choice for designers prioritizing peak efficiency and thermal performance. Its industry-leading low RDS(on) and optimized switching dynamics make it a pivotal component in achieving next-generation power conversion benchmarks across computing, automotive, and industrial systems.

Keywords: OptiMOS™, Low RDS(on), High-Efficiency Switching, Power Density, Synchronous Rectification.