Infineon BF799E6327 High-Performance N-Channel ESD Protection MOSFET

In the world of modern electronics, safeguarding sensitive components from electrostatic discharge (ESD) is a critical design challenge. The Infineon BF799E6327 stands out as a high-performance N-Channel MOSFET engineered specifically for robust ESD protection. This device is designed to offer superior clamping performance, making it an ideal solution for applications where voltage transients pose a significant risk to circuit integrity.

The BF799E6327 excels in providing extremely low clamping voltages, ensuring that any ESD event is effectively suppressed before it can damage protected components. Its ultra-low capacitance is another key feature, minimizing signal distortion and preserving data integrity in high-speed lines. This makes it particularly suitable for use in interfaces such as USB 2.0/3.0, HDMI, and other high-frequency data ports.

Housed in a compact SOT-23 package, this MOSFET is optimized for space-constrained PCB designs. It offers a high level of integration and reliability, meeting stringent industry standards for ESD protection. The device's ability to handle ESD strikes as defined by the IEC 61000-4-2 standard (Level 4) ensures robust performance in harsh environments.

Furthermore, the BF799E6327 requires no external components for basic operation, simplifying design and reducing bill-of-materials costs. Its fast response time to transient voltage spikes ensures that connected ICs are shielded almost instantaneously.

ICGOOODFIND: The Infineon BF799E6327 is an exceptional ESD protection MOSFET that combines low capacitance, low clamping voltage, and high reliability in a miniature package, making it a top choice for protecting high-speed data interfaces.

Keywords: ESD Protection, Low Capacitance, Clamping Voltage, N-Channel MOSFET, High-Speed Data Lines.